Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15847342Application Date: 2017-12-19
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Publication No.: US10468523B2Publication Date: 2019-11-05
- Inventor: Hiroki Fujii , Takahiro Mori
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-246521 20161220
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L21/762 ; H01L29/423 ; H01L21/3105 ; H01L27/092 ; H01L27/06 ; H01L21/8238
Abstract:
A recessed portion is formed in a top surface of an isolation insulation film filling an isolation trench between a p+ source region and a p+ drain region. A p− drift region is located below the isolation trench and connected to the p+ drain region. A gate electrode fills the recessed portion. An n-type impurity region is located below the p− drift region and directly below the recessed portion.
Public/Granted literature
- US20180175192A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-06-21
Information query
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