Invention Grant
- Patent Title: Doped and undoped vanadium oxides for low-k spacer applications
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Application No.: US15491331Application Date: 2017-04-19
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Publication No.: US10475642B2Publication Date: 2019-11-12
- Inventor: Eswaranand Venkatasubramanian , Srinivas Gandikota , Kelvin Chan , Atashi Basu , Abhijit Basu Mallick
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; C23C16/455 ; C23C16/40 ; H01L29/78 ; H01L29/51
Abstract:
A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.
Public/Granted literature
- US20170309476A1 Doped And Undoped Vanadium Oxides For Low-K Spacer Applications Public/Granted day:2017-10-26
Information query
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