Invention Grant
- Patent Title: Wafer charges monitoring
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Application No.: US15928343Application Date: 2018-03-22
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Publication No.: US10475678B2Publication Date: 2019-11-12
- Inventor: Chih-Chiang Wu , Chun-Chin Kang , Yu-Ho Ni , Chien-Ta Feng
- Applicant: Advanced Ion Beam Technology, Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.
- Current Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, PC
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/265 ; H01L21/66 ; H01L21/683

Abstract:
Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.
Public/Granted literature
- US20180330973A1 WAFER CHARGES MONITORING Public/Granted day:2018-11-15
Information query
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