公开(公告)号：US10984524B2

公开(公告)日：2021-04-20

申请号：US16185133

申请日：2018-11-09

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li Chen ,  Yu-Ho Ni ,  Chien-Cheng Kuo ,  Te-min Wang

IPC: G06T7/00 ,  G06T7/73 ,  H01L21/68

Abstract: A method for calibrating element in a semiconductor processing device with a camera is provided. The method for calibrating element in a semiconductor processing device with a camera includes taking a first picture of a first element by a camera; providing a first actuator to move the first element an increment along a first direction; taking a second picture of the first element by the camera; and comparing the first picture and the second picture to calibrate the first element. A system for calibrating element in a semiconductor processing device with a camera is also provided.

公开(公告)号：US10804821B2

公开(公告)日：2020-10-13

申请号：US15689158

申请日：2017-08-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Te-Min Wang ,  Yu-Ho Ni ,  Chun-Chieh Lin ,  Chien-Chung Hou ,  Cheng-Mao Chien

IPC: H02N13/00 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  G01R31/28 ,  G01R27/26 ,  H05F3/02

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

公开(公告)号：US10699876B2

公开(公告)日：2020-06-30

申请号：US15297551

申请日：2016-10-19

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Yu-Ho Ni ,  Chun-Chin Kang ,  Chieh-Jen Yang

IPC: H01J37/30 ,  H01J37/20 ,  H01L21/683 ,  B08B7/00 ,  H02N13/00 ,  H01J37/304

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert gas may be used to generate the ion beam for removing the depositions and protecting the dielectric layer inside the work surface of the ESC.

公开(公告)号：US20180330973A1

公开(公告)日：2018-11-15

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/66 ,  H01L21/265

CPC classification number: H01L21/67253 ,  H01L21/265 ,  H01L21/6831 ,  H01L22/14 ,  H01L22/20

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US20190301661A1

公开(公告)日：2019-10-03

申请号：US16369479

申请日：2019-03-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Yu-Lin Chang ,  Chien-Cheng Kuo ,  Yu-Ho Ni ,  Chun-Chieh Lin

IPC: F16L59/065

Abstract: The proposed vacuum jacketed tube may deliver the high/low temperature fluid with less temperature-transfer, especially may delivery high/low temperature fluid through a flexible structure. The vacuum jacketed tube includes a tubular structure surrounding a pipe wherein the fluid is delivered therethrough. Also, the space between the tubular structure and the pipe may be vacuumed. Therefore, the heat transferred into and/or away the fluid may be minimized, especially if the tubular structure and the pipe is separated by at least one thermal insulator or is separated mutually. Moreover, the vacuum jacketed tube may be mechanically connected to the source/destination of the delivered fluid, even other vacuum jacketed tube, through the bellows and/or the rotary joint. Besides, the pipe may be surrounded by a Teflon bellows and the tubular structure may be surrounded by a steel bellows, so as to further reduce the heat transferred into/away the fluid delivered inside the pipe.

公开(公告)号：US20180131293A1

公开(公告)日：2018-05-10

申请号：US15689158

申请日：2017-08-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Te-Min Wang ,  Yu-Ho Ni ,  Chun-Chieh Lin ,  Chien-Chung Hou ,  Cheng-Mao Chien

IPC: H02N13/00 ,  H05F3/02 ,  G01R27/26

CPC classification number: H02N13/00 ,  G01R27/2605 ,  G01R31/2808 ,  G01R31/2831 ,  H01L21/67288 ,  H01L21/6833 ,  H01L21/68742 ,  H05F3/02

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

公开(公告)号：US20170125211A1

公开(公告)日：2017-05-04

申请号：US15297551

申请日：2016-10-19

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Yu-Ho Ni ,  Chun-Chin Kang ,  Chieh-Jen Yang

IPC: H01J37/30 ,  B08B7/00 ,  H01J37/304 ,  H02N13/00

CPC classification number: H01J37/30 ,  B08B7/00 ,  B08B7/0035 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/30466 ,  H01L21/6833 ,  H02N13/00

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert gas may be used to generate the ion beam for removing the depositions and protecting the dielectric layer inside the work surface of the ESC.

公开(公告)号：US11349414B2

公开(公告)日：2022-05-31

申请号：US17017099

申请日：2020-09-10

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Te-Min Wang ,  Yu-Ho Ni ,  Chun-Chieh Lin ,  Chien-Chung Hou ,  Cheng-Mao Chien

IPC: H02N13/00 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  G01R31/28 ,  G01R27/26 ,  H05F3/02

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

公开(公告)号：US11062926B2

公开(公告)日：2021-07-13

申请号：US16593835

申请日：2019-10-04

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US10475678B2

公开(公告)日：2019-11-12

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.