公开(公告)号：US20180330973A1

公开(公告)日：2018-11-15

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/66 ,  H01L21/265

CPC classification number: H01L21/67253 ,  H01L21/265 ,  H01L21/6831 ,  H01L22/14 ,  H01L22/20

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US11062926B2

公开(公告)日：2021-07-13

申请号：US16593835

申请日：2019-10-04

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US10475678B2

公开(公告)日：2019-11-12

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.