Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15292790Application Date: 2016-10-13
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Publication No.: US10475707B2Publication Date: 2019-11-12
- Inventor: Gi Gwan Park , Jung Gun You , Ki II Kim , Sug Hyun Sung , Myung Yoon Um
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0012950 20160202; KR10-2016-0034018 20160322
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/762 ; H01L29/66 ; H01L27/092 ; H01L21/8234 ; H01L29/78 ; H01L29/165
Abstract:
A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.
Public/Granted literature
- US20170221769A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-08-03
Information query
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