公开(公告)号：US10475707B2

公开(公告)日：2019-11-12

申请号：US15292790

申请日：2016-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi Gwan Park ,  Jung Gun You ,  Ki II Kim ,  Sug Hyun Sung ,  Myung Yoon Um

IPC: H01L21/8238 ,  H01L21/762 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/165

Abstract: A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.