Invention Grant
- Patent Title: Method for producing electronic device with multi-layer contact
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Application No.: US16126190Application Date: 2018-09-10
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Publication No.: US10475761B2Publication Date: 2019-11-12
- Inventor: Alexander Heinrich , Michael Juerss , Konrad Roesl , Oliver Eichinger , Kok Chai Goh , Tobias Schmidt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L29/43 ; H01L23/482 ; H01L23/495 ; H01L23/00
Abstract:
A method for producing an electric device with a multi-layer contact is disclosed. In an embodiment, a method includes providing a carrier, the carrier having a metallic layer disposed on its surface, providing a semiconductor substrate, forming a layer stack on the semiconductor substrate and attaching the layer stack of the semiconductor substrate to the metallic layer of the carrier so that an intermetallic phase is formed between the metallic layer and the solder layer.
Public/Granted literature
- US20190006311A1 Method for Producing Electronic Device With Multi-Layer Contact Public/Granted day:2019-01-03
Information query
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