Invention Grant
- Patent Title: Semiconductor devices with steep junctions and methods of manufacturing thereof
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Application No.: US15665905Application Date: 2017-08-01
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Publication No.: US10475881B2Publication Date: 2019-11-12
- Inventor: Alexander Breymesser , Hans-Joachim Schulze , Holger Schulze , Werner Schustereder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102016114264 20160802
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/268 ; H01L21/324 ; H01L29/08 ; H01L29/167 ; H01L29/739 ; H01L29/861 ; H01L29/36 ; H01L21/265
Abstract:
Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at least in the melt section.
Public/Granted literature
- US20180040691A1 Semiconductor Devices with Steep Junctions and Methods of Manufacturing Thereof Public/Granted day:2018-02-08
Information query
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