Invention Grant
- Patent Title: Phase change memory device
-
Application No.: US15686308Application Date: 2017-08-25
-
Publication No.: US10482954B2Publication Date: 2019-11-19
- Inventor: Fabio Pellizzer , Roberto Bez , Ferdinando Bedeschi , Roberto Gastaldi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: EP06425531 20060727
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/56 ; H01L27/24 ; H01L45/00

Abstract:
A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
Public/Granted literature
- US20170352414A1 PHASE CHANGE MEMORY DEVICE Public/Granted day:2017-12-07
Information query