Invention Grant
- Patent Title: Dual demarcation voltage sensing before writes
-
Application No.: US15046339Application Date: 2016-02-17
-
Publication No.: US10482960B2Publication Date: 2019-11-19
- Inventor: Daniel Chu , Kiran Pangal , Mase Taub , Sandeep Guliani , Raymond Zeng
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Thorpe North and Western, LLP
- Agent David W. Osborne
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
Nonvolatile memory (e.g. phase change memory) devices, systems, and methods of programming the nonvolatile memory including sensing of a snapback current using a set demarcation voltage for set bit mapped cells and a reset demarcation voltage for reset bit mapped cells before selective writes.
Public/Granted literature
- US20170236580A1 DUAL DEMARCATION VOLTAGE SENSING BEFORE WRITES Public/Granted day:2017-08-17
Information query
