Invention Grant
- Patent Title: Beam profiling speed enhancement for scanned beam implanters
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Application No.: US14978120Application Date: 2015-12-22
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Publication No.: US10483086B2Publication Date: 2019-11-19
- Inventor: Andy M. Ray , Edward C. Eisner , Bo H. Vanderberg
- Applicant: Axcelis Technologies, Inc.
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01J37/30
- IPC: H01J37/30 ; H01J37/304 ; H01J37/317

Abstract:
An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.
Public/Granted literature
- US20160189926A1 Beam Profiling Speed Enhancement for Scanned Beam Implanters Public/Granted day:2016-06-30
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