公开(公告)号：US09620327B2

公开(公告)日：2017-04-11

申请号：US14978776

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J37/00 ,  H01J37/141 ,  H01J37/08 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/141 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/04922 ,  H01J2237/1415 ,  H01J2237/152

Abstract: A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coils operably are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operably coupled to the yoke and configured to generate a predominantly multipole magnetic field, wherein the predominantly multipole magnetic field is one of static or time-varying.

公开(公告)号：US08653486B2

公开(公告)日：2014-02-18

申请号：US13713251

申请日：2012-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J37/317 ,  H01J37/10

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US10037877B1

公开(公告)日：2018-07-31

申请号：US15637538

申请日：2017-06-29

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: A61N5/00 ,  H01J49/20 ,  H01J49/12 ,  H01J49/06

CPC classification number: H01J49/20 ,  H01J37/05 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/061 ,  H01J49/126 ,  H01J49/30 ,  H01J2237/15

Abstract: An ion implantation system has an ion source forming an ion beam. An mass analyzer defines and varies a mass analyzed beam along a beam path. A moveable mass resolving aperture assembly has a resolving aperture whose position is selectively varied in response to the variation of the beam path by the mass analyzer. A deflecting deceleration element positioned selectively deflects the beam path and selectively decelerate the mass analyzed beam. A controller selectively operates the ion implantation system in both a drift mode and decel mode. The controller passes the mass analyzed beam along a first path through the resolving aperture without deflection or deceleration in the drift mode and deflects and decelerates the beam along a second path in the decel mode. The position of the resolving aperture is selectively varied based on the variation in the beam path through the mass analyzer and the deflecting deceleration element.

公开(公告)号：US20130099131A1

公开(公告)日：2013-04-25

申请号：US13713251

申请日：2012-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US10483086B2

公开(公告)日：2019-11-19

申请号：US14978120

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Andy M. Ray ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

公开(公告)号：US20160189913A1

公开(公告)日：2016-06-30

申请号：US14978776

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J37/141 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/141 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/04922 ,  H01J2237/1415 ,  H01J2237/152

Abstract: A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coils operably are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operably coupled to the yoke and configured to generate a predominantly multipole magnetic field, wherein the predominantly multipole magnetic field is one of static or time-varying.

Abstract translation: 提供了用于离子注入系统的组合扫描和聚焦磁体。 组合的扫描和聚焦磁体具有磁导率高的磁轭。 轭限定了构造成使离子束通过其中的孔。 一个或多个扫描器线圈可操作地耦合到磁轭并且被配置为当电耦合到电源时产生随时间变化的主要偶极磁场。 一个或多个聚焦线圈可操作地耦合到磁轭并且被配置为产生主要是多极磁场，其中主要是多极磁场是静态或时变之一。

公开(公告)号：US20160189917A1

公开(公告)日：2016-06-30

申请号：US14979653

申请日：2015-12-28

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: H01J37/147 ,  H01J37/05 ,  H01J37/317

CPC classification number: H01J37/1475 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1478 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

Abstract translation: 离子注入系统采用质量分析仪进行质量分析和角度校正。 离子源沿着光束路径产生离子束。 质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。 孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。 分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。 角度测量系统位于分辨孔径的下游，并获得离子束的入射角。 控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。

公开(公告)号：US20250046563A1

公开(公告)日：2025-02-06

申请号：US18362429

申请日：2023-07-31

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Peter Platow ,  Edward C. Eisner ,  Shu Satoh

IPC: H01J37/141 ,  H01J37/21 ,  H01J37/244 ,  H01J37/317

Abstract: A magnetic focusing apparatus for focusing an ion beam has a first magnet pair, a first core having a first yoke and a pair of first pole members defining a pair of first poles. A second core has a second yoke and a pair of second pole members defining a pair of second poles. A first gap separates the pairs of first and second poles. First and second coils are respectively wound around the first and second cores. The pairs of first and second poles control a focus of the ion beam along a first plane based on a current, and the pairs of first and second poles define an exit trajectory of the ion beam along a second plane downstream of the first magnet pair. The exit trajectory does not angularly deviate along the second plane from an entrance trajectory upstream of the first magnet pair.

公开(公告)号：US09679739B2

公开(公告)日：2017-06-13

申请号：US14978089

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/00 ,  H01J37/12 ,  H01J37/05 ,  H01J37/147 ,  H01J37/20 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/12 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3171 ,  H01J2237/31705

Abstract: A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.

公开(公告)号：US20160189926A1

公开(公告)日：2016-06-30

申请号：US14978120

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Andy M. Ray ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

Abstract translation: 提供离子注入系统和方法，其中离子束被调谐到第一处理配方。 沿着扫描平面以第一频率扫描离子束，限定第一扫描离子束。 光束成像设备通过第一扫描离子束平移，并且跨越第一扫描离子的宽度测量第一扫描离子束的一个或多个特性，从而限定与第一扫描离子束相关联的第一光束轮廓。 然后以第二频率扫描离子束，从而限定第二扫描离子束，其中第二频率小于第一频率。 至少部分地基于第一光束轮廓确定与第二扫描离子束相关联的第二光束轮廓。 随后通过第二扫描离子束将离子植入工件。