Invention Grant
- Patent Title: Optically restorable semiconductor device, method for fabricating the same, and flash memory device using the same
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Application No.: US15993765Application Date: 2018-05-31
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Publication No.: US10483300B2Publication Date: 2019-11-19
- Inventor: JungWook Lim , Sun Jin Yun , Tae Yoon Kim , Jeho Na , Seong Hyun Lee , Kwang Hoon Jung
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2017-0069253 20170602; KR10-2018-0002438 20180108
- Main IPC: H01L27/144
- IPC: H01L27/144 ; H01L31/113 ; H01L31/0336 ; G11C13/04 ; H01L31/18 ; G11C16/04 ; G11C16/18 ; H01L31/0296

Abstract:
Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
Public/Granted literature
Information query
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