公开(公告)号：US10483300B2

公开(公告)日：2019-11-19

申请号：US15993765

申请日：2018-05-31

申请人： Electronics and Telecommunications Research Institute

发明人： JungWook Lim ,  Sun Jin Yun ,  Tae Yoon Kim ,  Jeho Na ,  Seong Hyun Lee ,  Kwang Hoon Jung

IPC分类号： H01L27/144 ,  H01L31/113 ,  H01L31/0336 ,  G11C13/04 ,  H01L31/18 ,  G11C16/04 ,  G11C16/18 ,  H01L31/0296

摘要： Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

公开(公告)号：US20180350852A1

公开(公告)日：2018-12-06

申请号：US15993765

申请日：2018-05-31

申请人： Electronics and Telecommunications Research Institute

发明人： JungWook Lim ,  Sun Jin Yun ,  Tae Yoon Kim ,  Jeho Na ,  Seong Hyun Lee ,  Kwang Hoon Jung

IPC分类号： H01L27/144 ,  H01L31/113 ,  H01L31/18 ,  H01L31/0336 ,  G11C13/04

CPC分类号： H01L27/1443 ,  G11C13/047 ,  G11C16/0466 ,  G11C16/18 ,  H01L27/1446 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/1136 ,  H01L31/18

摘要： Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.