CMOS-compatible non-filamentary RRAM devices and techniques for formation thereof are provided. In one aspect, a method of forming a non-filamentary RRAM device includes: depositing a base oxide layer (e.g., hafnium oxide) on a bottom electrode; depositing a cap layer (e.g., amorphous silicon) on the base oxide layer; and depositing a top electrode on the cap layer, wherein the cap layer and the top electrode are deposited in-situ without any air exposure in between such that there is an absence of oxide at an interface between the cap layer and the top electrode. A low resistivity layer can optionally be deposited on the top electrode. An RRAM device and a computing device having a crossbar array of the present RRAM cells are also provided.