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公开(公告)号：US20180006108A1
公开(公告)日：2018-01-04
申请号：US15198800
申请日：2016-06-30
CPC分类号： H01L28/75
摘要： A layered structure including a tri-stack dielectric layer and a plurality of metal layers insulated from each other by the tri-stack dielectric layer. The plurality of metal layers includes a set of first-type metal layers and a set of second-type metal layers. An adjacent pair of the plurality of metal layers includes a first-type metal layer and a second-type metal layer. The tri-stack dielectric layer includes a first tri-stack layer including Al2O3, a second tri-stack layer including HfO2; and a third tri-stack layer including Al2O3.
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公开(公告)号：US20170330830A1
公开(公告)日：2017-11-16
申请号：US15663145
申请日：2017-07-28
IPC分类号： H01L23/528 , H01L23/532 , H01L23/522 , H01L23/485 , H01L21/8234 , H01L21/768 , H01L21/02 , H01L29/45
CPC分类号： H01L23/528 , H01L21/02134 , H01L21/02137 , H01L21/76817 , H01L21/7684 , H01L21/7688 , H01L21/76886 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L23/485 , H01L23/5226 , H01L23/5329 , H01L29/45
摘要： A modified trench metal-semiconductor alloy formation method involves depositing a layer of a printable dielectric or a sacrificial carbon material within a trench structure and over contact regions of a semiconductor device, and then selectively removing the printable dielectric or sacrificial carbon material to segment the trench and form plural contact vias. A metallization layer is formed within the contact vias and over the contact regions.
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公开(公告)号：US09601686B1
公开(公告)日：2017-03-21
申请号：US14967773
申请日：2015-12-14
摘要： A method of making a magnetoresistive structure is disclosed. The method includes forming a pillar structure including a magnetic tunnel junction on a substrate that includes a first electrode, depositing a stressed layer onto a pillar structure sidewall, and depositing a second electrode above the magnetic tunnel junction.
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公开(公告)号：US11737373B2
公开(公告)日：2023-08-22
申请号：US17039398
申请日：2020-09-30
CPC分类号： H10N60/0128 , C23C14/0036 , H10N60/0912 , H10N60/12 , H10N60/85 , H10N69/00 , C23C14/02 , C23C14/0682
摘要： A superconducting device which includes a substrate, multiple niobium leads formed on the substrate, a niobium silicide (NbSix) passivation layer formed on a surface of at least one of the multiple niobium leads, and an aluminum lead formed directly on at least a portion of the NbSix passivation layer such that an interface therebetween is substantially free of oxygen and oxidized material, where the multiple niobium leads and the aluminum lead are constructed to carry a supercurrent while in use.
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公开(公告)号：US20220102614A1
公开(公告)日：2022-03-31
申请号：US17039398
申请日：2020-09-30
摘要： A superconducting device which includes a substrate, multiple niobium leads formed on the substrate, a niobium silicide (NbSix) passivation layer formed on a surface of at least one of the multiple niobium leads, and an aluminum lead formed directly on at least a portion of the NbSix passivation layer such that an interface therebetween is substantially free of oxygen and oxidized material, where the multiple niobium leads and the aluminum lead are constructed to carry a supercurrent while in use.
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6.发明授权公开(公告)号：US10168299B2
公开(公告)日：2019-01-01
申请号：US15211413
申请日：2016-07-15
IPC分类号： G01N27/447 , H01L21/311 , H01L21/321 , H01L21/3105 , H01L21/02 , H01L21/3205 , B01L3/00
摘要： A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
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7.发明申请公开(公告)号：US20180017524A1
公开(公告)日：2018-01-18
申请号：US15211413
申请日：2016-07-15
IPC分类号： G01N27/447 , H01L21/311 , B01L3/00 , H01L21/321 , H01L21/02 , H01L21/3105 , H01L21/3205
CPC分类号： G01N27/44791 , B01L3/502707 , B01L3/50273 , B01L2200/10 , B01L2300/0645 , B01L2300/0887 , B01L2400/0421 , H01L21/02134 , H01L21/31053 , H01L21/31116 , H01L21/32051 , H01L21/32115
摘要： A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
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8.发明授权Electrode pair fabrication using directed self assembly of diblock copolymers 有权使用二嵌段共聚物的定向自组装的电极对制造公开(公告)号：US09349640B1
公开(公告)日：2016-05-24
申请号：US14749896
申请日：2015-06-25
IPC分类号： H01L21/4763 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L21/7684 , H01L21/76864 , H01L23/528 , H01L45/06 , H01L45/1226 , H01L45/1253 , H01L45/16
摘要： Structures including alternating first U-shaped electrodes and second U-shaped electrodes and contact pads interconnecting the first and the second U-shaped electrodes are provided. Each of the first U-shaped electrodes includes substantially parallel straight portions connected by a bent portion located on one end of a substrate. Each of the second U-shaped electrodes includes substantially parallel straight portions connected by a bent portion located on an opposite end of the substrate. Every adjacent straight portions of neighboring first and second U-shaped electrodes constitute an electrode pair having a sub-lithographic pitch. Each of the contact pads overlaps and contacts the bent portion of one of the first and the U-shaped electrodes.
摘要翻译： 提供包括交替的第一U形电极和第二U形电极和互连第一和第二U形电极的接触焊盘的结构。 每个第一U形电极包括基本上平行的直线部分，该直线部分位于位于基板一端的弯曲部分。 每个第二U形电极包括通过位于基板的相对端上的弯曲部分连接的基本平行的直线部分。 相邻的第一和第二U形电极的每个相邻的直线部分构成具有亚光刻间距的电极对。 每个接触垫重叠并接触第一和U形电极之一的弯曲部分。
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9.发明授权公开(公告)号：US11221310B2
公开(公告)日：2022-01-11
申请号：US16176105
申请日：2018-10-31
IPC分类号： G01N27/447 , H01L21/02 , H01L21/311 , H01L21/321 , H01L21/3105 , H01L21/768 , B01L3/00 , B82Y15/00 , B82Y40/00
摘要： A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
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10.发明申请公开(公告)号：US20190072518A1
公开(公告)日：2019-03-07
申请号：US16176105
申请日：2018-10-31
IPC分类号： G01N27/447 , B01L3/00 , H01L21/3105 , H01L21/321 , H01L21/3205 , H01L21/311 , H01L21/02
摘要： A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
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