According to one embodiment, a PCM memory device includes a memory matrix having memory cells of the phase-change type organized in a plurality of word lines and bit lines. Each memory cell has a storage element and an access element including at least one MOS transistor, which is controlled to allow access to the storage element and to carry out read/programming storage operations, in which source terminals of the MOS transistors of access elements of the memory cells of the same word line are connected to the same source line. The source lines of the memory matrix are electrically short-circuited in groups. A single source line driver element for each group of source lines is configured in such a manner as to generate a respective source line driver signal in order to bias in a corresponding manner all the source lines of the respective group.