Invention Grant
- Patent Title: Method for forming semiconductor device structure with etch stop layer
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Application No.: US15730934Application Date: 2017-10-12
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Publication No.: US10522360B2Publication Date: 2019-12-31
- Inventor: Ya-Ling Lee , Shing-Chyang Pan , Keng-Chu Lin , Wen-Cheng Yang , Chih-Tsung Lee , Victor Y. Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/8234 ; H01L21/3065 ; H01L21/02 ; H01L21/768
Abstract:
A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.
Public/Granted literature
- US20180166285A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH ETCH STOP LAYER Public/Granted day:2018-06-14
Information query
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