公开(公告)号：US09472502B1

公开(公告)日：2016-10-18

申请号：US14798996

申请日：2015-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling Lee ,  Wen-Cheng Yang ,  Victor Y. Lu

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L21/76873 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/53266

Abstract: Some embodiments relate to a method of manufacturing an integrated circuit device. In this method a dielectric layer is formed over a substrate. The dielectric layer comprises an opening arranged within the dielectric layer. A first cobalt liner is formed along bottom and sidewall surfaces of the opening. A barrier liner is formed on exposed surfaces of the first cobalt liner. A bulk cobalt layer is formed in the opening and over the barrier liner to fill a remaining space of the opening.

Abstract translation: 一些实施例涉及制造集成电路器件的方法。 在该方法中，在衬底上形成介电层。 电介质层包括布置在电介质层内的开口。 沿着开口的底部和侧壁表面形成第一钴衬垫。 阻挡衬垫形成在第一钴衬垫的暴露表面上。 在开口中和隔离衬里上形成体积钴层以填充开口的剩余空间。

公开(公告)号：US20150107273A1

公开(公告)日：2015-04-23

申请号：US14059851

申请日：2013-10-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Surendra Babu Anantharaman ,  Wen-Cheng Yang ,  Chung-En Kao ,  Victor Y. Lu ,  Wei Chin

IPC: F04B37/08

CPC classification number: F04B37/08 ,  F04B37/085

Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.

Abstract translation: 低温泵装置包括达到超高真空度的纳米结构材料。 纳米结构材料可以与用于固定吸附剂材料的吸附材料或固定胶层混合。 纳米结构材料的良好导热性和吸附性能有助于降低工作温度并延长低温泵的再生循环。

公开(公告)号：US11111910B2

公开(公告)日：2021-09-07

申请号：US16207470

申请日：2018-12-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Surendra Babu Anantharaman ,  Wen-Cheng Yang ,  Chung-En Kao ,  Victor Y. Lu ,  Wei Chin

IPC: F04B37/08

Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.

公开(公告)号：US10522360B2

公开(公告)日：2019-12-31

申请号：US15730934

申请日：2017-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling Lee ,  Shing-Chyang Pan ,  Keng-Chu Lin ,  Wen-Cheng Yang ,  Chih-Tsung Lee ,  Victor Y. Lu

IPC: H01L21/285 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

公开(公告)号：US10145371B2

公开(公告)日：2018-12-04

申请号：US14059851

申请日：2013-10-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Surendra Babu Anantharaman ,  Wen-Cheng Yang ,  Chung-En Kao ,  Victor Y. Lu ,  Wei Chin

IPC: F04B37/04 ,  F04B37/08

Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.

公开(公告)号：US10811263B2

公开(公告)日：2020-10-20

申请号：US16730343

申请日：2019-12-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ling Lee ,  Shing-Chyang Pan ,  Keng-Chu Lin ,  Wen-Cheng Yang ,  Chih-Tsung Lee ,  Victor Y. Lu

IPC: H01L21/285 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

公开(公告)号：US20190101110A1

公开(公告)日：2019-04-04

申请号：US16207470

申请日：2018-12-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Surendra Babu Anantharaman ,  Wen-Cheng Yang ,  Chung-En Kao ,  Victor Y. Lu ,  Wei Chin

IPC: F04B37/08

Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.