Invention Grant
- Patent Title: Perpendicular magnetic memory with reduced switching current
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Application No.: US15735616Application Date: 2015-06-26
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Publication No.: US10522739B2Publication Date: 2019-12-31
- Inventor: Kaan Oguz , Kevin P. O'Brien , Brian S. Doyle , David L. Kencke , Charles C. Kuo , Robert S. Chau
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2015/037945 WO 20150626
- International Announcement: WO2016/209257 WO 20161229
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/10 ; H01L43/02
Abstract:
An embodiment includes an apparatus comprising: a substrate; and a perpendicular magnetic tunnel junction (pMTJ) comprising a fixed layer and first and second free layers; wherein (a) the first free layer includes Cobalt (Co), Iron (Fe), and Boron (B), and (b) the second free layer is epitaxial and includes Manganese (Mn) and Gallium (Ga). Other embodiments are described herein.
Public/Granted literature
- US20180301619A1 PERPENDICULAR MAGNETIC MEMORY WITH REDUCED SWITCHING CURRENT Public/Granted day:2018-10-18
Information query
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