Invention Grant
- Patent Title: Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory
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Application No.: US15778577Application Date: 2016-11-25
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Publication No.: US10522742B2Publication Date: 2019-12-31
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-232334 20151127; JP2016-053072 20160316; JP2016-056058 20160318; JP2016-210531 20161027; JP2016-210533 20161027
- International Application: PCT/JP2016/084976 WO 20161125
- International Announcement: WO2017/090730 WO 20170601
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/06 ; G11C11/16 ; H01L27/22 ; H01L43/02 ; H01L43/10 ; H01L43/14 ; G01R33/09 ; H03B15/00

Abstract:
A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpendicular to a surface of the layer, the wiring extends in a second direction intersecting the first and is bonded to the layer, wherein the wiring material is a binary alloy represented by the formula AxB1-x, a metal carbide, or metal nitride, wherein A is selected from Al, Ti, and Pt, and B is selected from Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is selected from Al, Si, Ti, Y, and Ta, and B is selected from C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m.
Public/Granted literature
- US20180351085A1 SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY Public/Granted day:2018-12-06
Information query
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