发明授权
- 专利标题： Metal chalcogenide thin film electrode, method for the production thereof and use
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申请号： US15101639申请日： 2014-12-04
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公开(公告)号： US10526716B2公开(公告)日： 2020-01-07
- 发明人: Michael Lublow , Anna Fischer , Matthias Driess , Thomas Schedel-Niedrig , Marcel-Philip Luecke
- 申请人： Technische Universitaet Berlin
- 申请人地址： DE Berlin
- 专利权人： TECHNISCHE UNIVERSITAET BERLIN
- 当前专利权人： TECHNISCHE UNIVERSITAET BERLIN
- 当前专利权人地址： DE Berlin
- 代理机构： Fox Rothschild LLP
- 优先权： DE102013224900 20131204
- 国际申请： PCT/EP2014/076591 WO 20141204
- 国际公布： WO2015/082626 WO 20150611
- 主分类号： C25D9/08
- IPC分类号： C25D9/08 ; C25D5/50 ; C25D7/12 ; C25D3/66 ; C25D5/34 ; C25D5/00 ; C01G49/10 ; C01G51/08 ; C01G53/08 ; C01G3/04 ; C25B11/04 ; C25B1/00 ; C01G49/02 ; C01G51/04 ; C01G53/00 ; C01G53/04 ; C01G3/02 ; C01B33/20 ; C01G51/00
摘要：
The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: (a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution, (b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and (c) during and/or after step (b) contacting the substrate with an elementary chalcogen forming a metal chalcogenide layer on the substrate. The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.