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公开(公告)号:US10526716B2
公开(公告)日:2020-01-07
申请号:US15101639
申请日:2014-12-04
发明人: Michael Lublow , Anna Fischer , Matthias Driess , Thomas Schedel-Niedrig , Marcel-Philip Luecke
IPC分类号: C25D9/08 , C25D5/50 , C25D7/12 , C25D3/66 , C25D5/34 , C25D5/00 , C01G49/10 , C01G51/08 , C01G53/08 , C01G3/04 , C25B11/04 , C25B1/00 , C01G49/02 , C01G51/04 , C01G53/00 , C01G53/04 , C01G3/02 , C01B33/20 , C01G51/00
摘要: The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: (a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution, (b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and (c) during and/or after step (b) contacting the substrate with an elementary chalcogen forming a metal chalcogenide layer on the substrate. The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.