Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15798780Application Date: 2017-10-31
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Publication No.: US10527872B2Publication Date: 2020-01-07
- Inventor: Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-099864 20150515
- Main IPC: G02B6/26
- IPC: G02B6/26 ; G02F1/025 ; H01L23/532 ; G02B6/125 ; G02B6/132 ; G02B6/28 ; G02B6/12

Abstract:
A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.
Public/Granted literature
- US20180052338A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-02-22
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