-
公开(公告)号：US10527872B2
公开(公告)日：2020-01-07
申请号：US15798780
申请日：2017-10-31
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki
Abstract: A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.
-
公开(公告)号：US10162110B2
公开(公告)日：2018-12-25
申请号：US15243718
申请日：2016-08-22
Inventor： Tatsuya Usami , Keiji Sakamoto , Yoshiaki Yamamoto , Shinichi Watanuki , Masaru Wakabayashi , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
Abstract: A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.
-
公开(公告)号：US09835882B2
公开(公告)日：2017-12-05
申请号：US15152117
申请日：2016-05-11
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki
CPC classification number: G02F1/025 , G02B6/125 , G02B6/132 , G02B6/2852 , G02B2006/12061 , G02B2006/12142 , G02B2006/12147 , G02F2201/08 , H01L23/53214 , H01L23/53228 , H01L2224/05
Abstract: A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.
-
Patent Agency Ranking
公开(公告)号：US10317769B2
公开(公告)日：2019-06-11
申请号：US15965900
申请日：2018-04-28
Applicant: Renesas Electronics Corporation
Inventor： Shinichi Watanuki , Yasutaka Nakashiba , Masaru Wakabayashi
Abstract: In a semiconductor device connected to a first optical waveguide, a phase modulation unit, and a second optical waveguide in this order and having an optical modulator guiding light in a first direction, the phase modulation unit includes: a semiconductor layer whose length in the first direction is larger than a width in a second direction orthogonal to the first direction and which is made of monocrystalline silicon; a core part serving as an optical waveguide region formed on the semiconductor layer, and extending in the first direction; a pair of slab parts arranged on both sides of the core part in the second direction; a first electrode coupled with one of the slab parts; and a second electrode coupled with the other of the slab parts. The core part has a p type semiconductor region and an n type semiconductor region extending in the first direction, and the second direction coincides with a crystal orientation of the semiconductor layer.
-
公开(公告)号：US10295743B2
公开(公告)日：2019-05-21
申请号：US14827779
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.
-
公开(公告)号：US20160054521A1
公开(公告)日：2016-02-25
申请号：US14827779
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC classification number: G02B6/125 , G02B6/136 , G02B2006/12061
Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.
Abstract translation: 公开了一种可以提高光偏移精度并且抑制光传输损失的光半导体装置。 在该装置中，光学耦合区域的第一光学耦合部分的内侧表面和该区域的第二光学耦合部分的内侧表面的线边缘粗糙度增加。 这种方式使光耦合容易从第一至第二光波导。 相比之下，线边缘粗糙度降低：光耦合区域的第一光耦合部分的外侧表面; 该区域的第二光耦合部分的外侧表面; 第一光波导的一部分的两个相对的侧表面，该部分是除该区域之外的任何部分; 以及第二光波导的一部分的两个相对的侧表面，该部分是该区域以外的任何部分。
-
公开(公告)号：US09508662B2
公开(公告)日：2016-11-29
申请号：US14827841
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC classification number: H01L23/60 , G02B6/43 , G02F1/0121 , G02F1/025 , G02F2201/12 , G02F2202/105 , H01L31/02002 , H01L2924/0002 , H05K1/0296 , H01L2924/00
Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.
Abstract translation: 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。
-
公开(公告)号：US20160056115A1
公开(公告)日：2016-02-25
申请号：US14827841
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC classification number: H01L23/60 , G02B6/43 , G02F1/0121 , G02F1/025 , G02F2201/12 , G02F2202/105 , H01L31/02002 , H01L2924/0002 , H05K1/0296 , H01L2924/00
Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.
Abstract translation: 提供了可以防止电信号在光半导体器件中劣化的技术。 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.013 seconds)
