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    OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING THE SAME
    2.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING THE SAME 审中-公开
    光学半导体器件及其制造方法

    公开(公告)号：US20160054521A1

    公开(公告)日：2016-02-25

    申请号：US14827779

    申请日：2015-08-17

    Applicant: Renesas Electronics Corporation

    Inventor： Hiroyuki Kunishima ,  Yasutaka Nakashiba ,  Masaru Wakabayashi ,  Shinichi Watanuki ,  Ken Ozawa ,  Tatsuya Usami ,  Yoshiaki Yamamoto ,  Keiji Sakamoto

    IPC: G02B6/125 ,  G02B6/136 ,  G02B6/293

    CPC classification number: G02B6/125 ,  G02B6/136 ,  G02B2006/12061

    Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.

    Abstract translation: 公开了一种可以提高光偏移精度并且抑制光传输损失的光半导体装置。 在该装置中，光学耦合区域的第一光学耦合部分的内侧表面和该区域的第二光学耦合部分的内侧表面的线边缘粗糙度增加。 这种方式使光耦合容易从第一至第二光波导。 相比之下，线边缘粗糙度降低：光耦合区域的第一光耦合部分的外侧表面; 该区域的第二光耦合部分的外侧表面; 第一光波导的一部分的两个相对的侧表面，该部分是除该区域之外的任何部分; 以及第二光波导的一部分的两个相对的侧表面，该部分是该区域以外的任何部分。

    Semiconductor device and method of manufacturing the same
    3.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US11764318B2

    公开(公告)日：2023-09-19

    申请号：US16950479

    申请日：2020-11-17

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Shotaro Kudo ,  Shinichi Watanuki ,  Takashi Ogura

    IPC: H01L31/0232 ,  H01L31/18

    CPC classification number: H01L31/02327 ,  H01L31/18

    Abstract: A Semiconductor device includes an insulating layer, an optical waveguide, a first dummy semiconductor film, a second semiconductor film and a third semiconductor film. The optical waveguide is formed on the insulating layer. The first dummy semiconductor film is formed on the insulating layer and is spaced apart from the optical waveguide. The first dummy semiconductor film is formed on the first semiconductor film. The second semiconductor film is integrally formed with the optical waveguide as a single member on the insulating layer. The third semiconductor film is formed on the second semiconductor film. A material of the first dummy semiconductor film is different from a material of the optical waveguide. In plan view, a distance between the optical waveguide and the first dummy semiconductor film in a first direction perpendicular to an extending direction of the optical waveguide is greater than a thickness of the insulating layer.

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11079540B2

    公开(公告)日：2021-08-03

    申请号：US16183319

    申请日：2018-11-07

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Shinichi Watanuki ,  Yasutaka Nakashiba

    IPC: G02F1/035 ,  G02F1/295 ,  G02B6/10 ,  G02B6/122 ,  H01L23/532 ,  H01L25/16 ,  H01L21/02 ,  G02F1/025 ,  G02B6/12 ,  H01L23/34 ,  G02B6/43

    Abstract: Two optical waveguides and an insulating film provided to cover the optical waveguides are formed over an insulating layer. Two wirings and a heater metal wire are formed over the insulating film via an insulating film different from the above insulating film. The latter insulating film is thinner than the former insulating film, and has a higher refractive index than the former insulating film. The leaked light from either of the two optical waveguides can be suppressed or prevented from being reflected by any one of the two wirings, the heater metal wire, and the like to travel again toward the two optical waveguides by utilizing the difference between the refractive indices of the two insulating films.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10317769B2

    公开(公告)日：2019-06-11

    申请号：US15965900

    申请日：2018-04-28

    Applicant: Renesas Electronics Corporation

    Inventor： Shinichi Watanuki ,  Yasutaka Nakashiba ,  Masaru Wakabayashi

    IPC: G02F1/225 ,  G02F1/21

    Abstract: In a semiconductor device connected to a first optical waveguide, a phase modulation unit, and a second optical waveguide in this order and having an optical modulator guiding light in a first direction, the phase modulation unit includes: a semiconductor layer whose length in the first direction is larger than a width in a second direction orthogonal to the first direction and which is made of monocrystalline silicon; a core part serving as an optical waveguide region formed on the semiconductor layer, and extending in the first direction; a pair of slab parts arranged on both sides of the core part in the second direction; a first electrode coupled with one of the slab parts; and a second electrode coupled with the other of the slab parts. The core part has a p type semiconductor region and an n type semiconductor region extending in the first direction, and the second direction coincides with a crystal orientation of the semiconductor layer.

    Optical semiconductor device, and method for producing the same
    7.
    发明授权
    Optical semiconductor device, and method for producing the same 有权

    公开(公告)号：US10295743B2

    公开(公告)日：2019-05-21

    申请号：US14827779

    申请日：2015-08-17

    Applicant: Renesas Electronics Corporation

    Inventor： Hiroyuki Kunishima ,  Yasutaka Nakashiba ,  Masaru Wakabayashi ,  Shinichi Watanuki ,  Ken Ozawa ,  Tatsuya Usami ,  Yoshiaki Yamamoto ,  Keiji Sakamoto

    IPC: G02B6/12 ,  G02B6/125 ,  G02B6/136

    Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.

    Semiconductor module, manufacturing method thereof, and communication method using the same
    10.
    发明授权
    Semiconductor module, manufacturing method thereof, and communication method using the same 有权

    公开(公告)号：US10895681B2

    公开(公告)日：2021-01-19

    申请号：US16411993

    申请日：2019-05-14

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Shinichi Watanuki ,  Yasutaka Nakashiba

    IPC: G02B6/12 ,  H01L25/16 ,  G02F1/025

    Abstract: The semiconductor device has an optical waveguide formed on a substrate, a first conductor film formed in the same layer as the optical waveguide, an insulating film formed on the first conductor film, a second conductor film formed on the insulating film, and a first interlayer insulating film formed on the substrate so as to cover the optical waveguide and the second conductor film. The semiconductor device includes a first contact hole reaching the first conductor film, a second contact hole reaching the second conductor film, a first contact plug formed in the first contact hole, and a second contact plug formed in the second contact hole. The first conductor film is disposed between the first contact plugs and the board, but the second conductor film is not disposed between the first contact plugs and the board.

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