- 专利标题: Semiconductor device
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申请号: US16175522申请日: 2018-10-30
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公开(公告)号: US10541216B2公开(公告)日: 2020-01-21
- 发明人: Kazuyuki Nakagawa , Keita Tsuchiya , Yoshiaki Sato , Shuuichi Kariyazaki , Norio Chujo , Masayoshi Yagyu , Yutaka Uematsu
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2017-245158 20171221
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L23/66 ; H01L23/538 ; H01L23/367 ; H01L23/00
摘要:
A semiconductor device includes a semiconductor chip mounted over a wiring substrate. A signal wiring for input for transmitting input signals to the semiconductor chip and a signal wiring for output for transmitting output signals from the semiconductor chip are placed in different wiring layers in the wiring substrate and overlap with each other. In the direction of thickness of the wiring substrate, each of the signal wirings is sandwiched between conductor planes supplied with reference potential. In the front surface of the semiconductor chip, a signal electrode for input and a signal electrode for output are disposed in different rows. In cases where the signal wiring for output is located in a layer higher than the signal wiring for input in the wiring substrate, the signal electrode for output is placed in a row closer to the outer edge of the front surface than the signal electrode for input.
公开/授权文献
- US20190198462A1 SEMICONDUCTOR DEVICE 公开/授权日:2019-06-27
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