Invention Grant
- Patent Title: Spin-orbit torque MRAMs and method for fabricating the same
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Application No.: US16055000Application Date: 2018-08-03
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Publication No.: US10546622B2Publication Date: 2020-01-28
- Inventor: Yu-Sheng Chen , I-Jung Wang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW106141350A 20171128
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/16 ; H01L43/04 ; H01L43/14 ; H01L43/08 ; H01L43/10 ; H01L43/06 ; H01L43/12 ; G11C11/18

Abstract:
A spin-orbit torque MRAM is provided. The spin-orbit torque MRAM includes a spin Hall metal layer, a free magnetic layer disposed on the spin Hall metal layer, a barrier layer, and a pinned layer. The free magnetic layer includes a first area and a second area located on both sides thereof. The barrier layer includes a first area and a second area located on both sides thereof. The first area of the barrier layer is disposed on that of the free magnetic layer, and the second area of the barrier layer is disposed on that of the free magnetic layer. The pinned layer is disposed on the first area of the barrier layer.
Public/Granted literature
- US20190164586A1 SPIN-ORBIT TORQUE MRAMS AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-05-30
Information query
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