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公开(公告)号：US11758821B2
公开(公告)日：2023-09-12
申请号：US17545794
申请日：2021-12-08
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Ziaur Rahaman Shakh , I-Jung Wang , Jeng-Hua Wei
Abstract: A magnetic memory structure includes a heavy-metal layer, a plurality of magnetic tunneling junction (MTJ) layer, a conductive layer and an insulation layer. In an example, the pinned-layer of the MTJ layers are arranged in a string form and disposed over the barrier-layer. In an example also disclosed, the pinned-layer, the free-layer of the MTJ layers are arranged in a string form. Whereas the pinned-layers are disposed over the barrier-layer and the free-layers are disposed over the heavy-metal layer. The conductive layer is formed under the heavy-metal layer and includes a first conductive portion and a second conductive portion separated from each other and connected with two end of the heavy-metal layer respectively. The insulation layer fills up an interval between the first conductive portion and the second conductive portion. The conductive layer has an electric conductivity higher than that of the heavy-metal layer.
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公开(公告)号：US20220109100A1
公开(公告)日：2022-04-07
申请号：US17168146
申请日：2021-02-04
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , I-Jung Wang , Shan-Yi Yang , Yao-Jen Chang
Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an upper electrode and a magnetic tunnel junction. The magnetic tunnel junction is disposed between the heavy metal layer and the upper electrode. The magnetic tunnel junction includes a free layer and a pinned layer. The free layer is disposed on the heavy metal layer, and the free layer has a first film plane area. The pinned layer is disposed on the free layer, and the pinned layer has a second film plane area. There is a preset angle between a long axis direction of a film plane shape of the free layer and a long axis direction of a film plane shape of the pinned layer, and the first film plane area is larger than the second film plane area.
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公开(公告)号：US11844288B2
公开(公告)日：2023-12-12
申请号：US17168146
申请日：2021-02-04
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , I-Jung Wang , Shan-Yi Yang , Yao-Jen Chang
Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an upper electrode and a magnetic tunnel junction. The magnetic tunnel junction is disposed between the heavy metal layer and the upper electrode. The magnetic tunnel junction includes a free layer and a pinned layer. The free layer is disposed on the heavy metal layer, and the free layer has a first film plane area. The pinned layer is disposed on the free layer, and the pinned layer has a second film plane area. There is a preset angle between a long axis direction of a film plane shape of the free layer and a long axis direction of a film plane shape of the pinned layer, and the first film plane area is larger than the second film plane area.
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公开(公告)号：US10546622B2
公开(公告)日：2020-01-28
申请号：US16055000
申请日：2018-08-03
Applicant: Industrial Technology Research Institute
Inventor： Yu-Sheng Chen , I-Jung Wang
IPC: H01L29/82 , G11C11/16 , H01L43/04 , H01L43/14 , H01L43/08 , H01L43/10 , H01L43/06 , H01L43/12 , G11C11/18
Abstract: A spin-orbit torque MRAM is provided. The spin-orbit torque MRAM includes a spin Hall metal layer, a free magnetic layer disposed on the spin Hall metal layer, a barrier layer, and a pinned layer. The free magnetic layer includes a first area and a second area located on both sides thereof. The barrier layer includes a first area and a second area located on both sides thereof. The first area of the barrier layer is disposed on that of the free magnetic layer, and the second area of the barrier layer is disposed on that of the free magnetic layer. The pinned layer is disposed on the first area of the barrier layer.
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公开(公告)号：US12033682B2
公开(公告)日：2024-07-09
申请号：US17563100
申请日：2021-12-28
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , I-Jung Wang , Shan-Yi Yang , Yao-Jen Chang , Fang-Ming Chen
CPC classification number: G11C11/161 , G11C11/1675 , H10B61/00 , H10N50/80 , H10N50/85 , H10N52/80
Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.
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Patent Agency Ranking
公开(公告)号：US11227990B2
公开(公告)日：2022-01-18
申请号：US16514523
申请日：2019-07-17
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Ziaur Rahaman Shakh , I-Jung Wang , Jeng-Hua Wei
Abstract: A magnetic memory structure is provided. The magnetic memory structure includes a magnetic tunneling junction (MTJ) layer and a heavy-metal layer. The MTJ layer includes a pinned-layer, a barrier-layer formed under the pinned-layer and a free-layer formed under the barrier-layer. The heavy-metal layer is formed under the free-layer. The barrier-layer has a first upper surface, the pinned-layer has a lower surface, and area of the first upper surface is larger than area of the lower surface.
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公开(公告)号：US20200058847A1
公开(公告)日：2020-02-20
申请号：US16664947
申请日：2019-10-28
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Shan-Yi Yang , Yao-Jen Chang , I-Jung Wang , Jeng-Hua Wei
Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.
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公开(公告)号：US20230178130A1
公开(公告)日：2023-06-08
申请号：US17563100
申请日：2021-12-28
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , I-Jung Wang , Shan-Yi Yang , Yao-Jen Chang , Fang-Ming Chen
CPC classification number: G11C11/161 , G11C11/1675 , H01L43/02 , H01L27/222 , H01L43/10
Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.
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公开(公告)号：US20220102623A1
公开(公告)日：2022-03-31
申请号：US17545794
申请日：2021-12-08
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Ziaur Rahaman Shakh , I-Jung Wang , Jeng-Hua Wei
Abstract: A magnetic memory structure includes a heavy-metal layer, a plurality of magnetic tunneling junction (MTJ) layer, a conductive layer and an insulation layer. In an example, the pinned-layer of the MTJ layers are arranged in a string form and disposed over the barrier-layer. In an example also disclosed, the pinned-layer, the free-layer of the MTJ layers are arranged in a string form. Whereas the pinned-layers are disposed over the barrier-layer and the free-layers are disposed over the heavy-metal layer. The conductive layer is formed under the heavy-metal layer and includes a first conductive portion and a second conductive portion separated from each other and connected with two end of the heavy-metal layer respectively. The insulation layer fills up an interval between the first conductive portion and the second conductive portion. The conductive layer has an electric conductivity higher than that of the heavy-metal layer.
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公开(公告)号：US20210020827A1
公开(公告)日：2021-01-21
申请号：US16514523
申请日：2019-07-17
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Ziaur Rahaman Shakh , I-Jung Wang , Jeng-Hua Wei
Abstract: A magnetic memory structure is provided. The magnetic memory structure includes a magnetic tunneling junction (MTJ) layer and a heavy-metal layer. The MTJ layer includes a pinned-layer, a barrier-layer formed under the pinned-layer and a free-layer formed under the barrier-layer. The heavy-metal layer is formed under the free-layer. The barrier-layer has a first upper surface, the pinned-layer has a lower surface, and area of the first upper surface is larger than area of the lower surface.
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