Invention Grant
- Patent Title: Memory device including heterogeneous volatile memory chips and electronic device including the same
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Application No.: US16055199Application Date: 2018-08-06
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Publication No.: US10559550B2Publication Date: 2020-02-11
- Inventor: Jungbae Lee , Kwanghyun Kim , Sang-Kyu Kang , Do Kyun Kim , DongMin Kim , Ji Hyun Ahn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2017-0182041 20171228
- Main IPC: G11C5/04
- IPC: G11C5/04 ; H01L25/065 ; G11C11/4076 ; H01L23/538 ; H01L27/108 ; G11C7/10 ; G11C11/4093 ; G11C11/406
Abstract:
A memory device includes a first volatile memory chip that includes a first volatile memory cell array storing first data and that receives or outputs the first data at a first bandwidth, and a second volatile memory chip that includes a second volatile memory cell array storing second data and that receives or outputs the second data at a second bandwidth different from the first bandwidth.
Public/Granted literature
- US20190206840A1 MEMORY DEVICE INCLUDING HETEROGENEOUS VOLATILE MEMORY CHIPS AND ELECTRONIC DEVICE INCLUDING THE SAME Public/Granted day:2019-07-04
Information query
