公开(公告)号：US10559550B2

公开(公告)日：2020-02-11

申请号：US16055199

申请日：2018-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungbae Lee ,  Kwanghyun Kim ,  Sang-Kyu Kang ,  Do Kyun Kim ,  DongMin Kim ,  Ji Hyun Ahn

IPC: G11C5/04 ,  H01L25/065 ,  G11C11/4076 ,  H01L23/538 ,  H01L27/108 ,  G11C7/10 ,  G11C11/4093 ,  G11C11/406

Abstract: A memory device includes a first volatile memory chip that includes a first volatile memory cell array storing first data and that receives or outputs the first data at a first bandwidth, and a second volatile memory chip that includes a second volatile memory cell array storing second data and that receives or outputs the second data at a second bandwidth different from the first bandwidth.