A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, first and second recesses spaced apart from each other in a first direction within the substrate, a first gate electrode filling the first recess and protruding above the substrate, a second gate electrode filling the second recess and protruding above the substrate, a first source/drain formed between the first and second recesses, a second source/drain formed in an opposite direction to the first source/drain with respect to the first recess, and a third source/drain formed in an opposite direction to the first source/drain with respect to the second recess and electrically connected to the second source/drain.