公开(公告)号：US10930693B2

公开(公告)日：2021-02-23

申请号：US16540713

申请日：2019-08-14

申请人： Samsung Electronics Co., Ltd.

发明人： Jae Kyu Lee ,  Ji Yoon Kim ,  Seung Sik Kim ,  Min Woong Seo ,  Ji Youn Song

IPC分类号： H01L27/146 ,  H04N5/369

摘要： A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

公开(公告)号：US10916587B2

公开(公告)日：2021-02-09

申请号：US16443233

申请日：2019-06-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Yon Lee ,  Chang Hwa Kim ,  Jae Ho Kim ,  Sang Chun Park ,  Gwi Deok Ryan Lee ,  Beom Suk Lee ,  Jae Kyu Lee ,  Kazunori Kakehi

IPC分类号： H01L27/30 ,  H01L27/28

摘要： An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

公开(公告)号：US20180182795A1

公开(公告)日：2018-06-28

申请号：US15813833

申请日：2017-11-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： SUNG IN KIM ,  Jae Kyu Lee ,  Jae Rok Kahng

IPC分类号： H01L27/146 ,  H01L29/423 ,  H01L29/78 ,  H01L29/08 ,  H04N5/374 ,  H04N5/378

CPC分类号： H01L27/14614 ,  H01L27/14616 ,  H01L27/14689 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/78 ,  H01L29/7827 ,  H04N5/374 ,  H04N5/378

摘要： A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, first and second recesses spaced apart from each other in a first direction within the substrate, a first gate electrode filling the first recess and protruding above the substrate, a second gate electrode filling the second recess and protruding above the substrate, a first source/drain formed between the first and second recesses, a second source/drain formed in an opposite direction to the first source/drain with respect to the first recess, and a third source/drain formed in an opposite direction to the first source/drain with respect to the second recess and electrically connected to the second source/drain.

公开(公告)号：US11476287B2

公开(公告)日：2022-10-18

申请号：US16928263

申请日：2020-07-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gwi Deok Ryan Lee ,  Jae Kyu Lee ,  Sang Chun Park ,  Tae Yon Lee ,  Jae Hoon Jeon ,  Myung Lae Chu

IPC分类号： H01L27/146 ,  H01L21/00 ,  H01L27/30 ,  H01L29/786 ,  H04N5/369

摘要： An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.

公开(公告)号：US10559613B2

公开(公告)日：2020-02-11

申请号：US15813833

申请日：2017-11-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sung In Kim ,  Jae Kyu Lee ,  Jae Rok Kahng

IPC分类号： H01L27/146 ,  H01L29/423 ,  H01L29/08 ,  H01L29/78 ,  H04N5/374 ,  H04N5/378

摘要： A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, first and second recesses spaced apart from each other in a first direction within the substrate, a first gate electrode filling the first recess and protruding above the substrate, a second gate electrode filling the second recess and protruding above the substrate, a first source/drain formed between the first and second recesses, a second source/drain formed in an opposite direction to the first source/drain with respect to the first recess, and a third source/drain formed in an opposite direction to the first source/drain with respect to the second recess and electrically connected to the second source/drain.