Invention Grant
- Patent Title: Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambers
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Application No.: US15482198Application Date: 2017-04-07
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Publication No.: US10563304B2Publication Date: 2020-02-18
- Inventor: Xiangjin Xie , Adolph Miller Allen , Xianmin Tang , Goichi Yoshidome
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/3215
- IPC: H01L21/3215 ; H01L21/768 ; C23C14/34 ; H01L21/321 ; C23C14/54 ; H01L21/683 ; H01L21/285 ; C23C16/455 ; C23C14/58 ; C23C14/22 ; C23C16/02 ; C23C14/56 ; C23C16/56 ; H01J37/32 ; C23C14/02 ; H01L23/532 ; H01J37/34 ; H01J3/34

Abstract:
Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.
Public/Granted literature
- US20180294162A1 BARRIER FILM DEPOSITION AND TREATMENT Public/Granted day:2018-10-11
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