To realize a multi-beam formation device that can stably machine a fine pattern using complementary lithography, provided is a device that deforms and deflects a beam, including an aperture layer having a first aperture that deforms and passes a beam incident thereto from a first surface side of the device and a deflection layer that passes and deflects the beam that has been passed by the aperture layer. The deflection layer includes a first electrode section having a first electrode facing a beam passing space in the deflection layer corresponding to the first aperture and a second electrode section having an extending portion that extends toward the beam passing space and is independent from an adjacent layer in the deflection layer and a second electrode facing the first electrode in a manner to sandwich the beam passing space between the first electrode and an end portion of the second electrode.