Exposure apparatus
    1.
    发明授权

    公开(公告)号:US09684245B2

    公开(公告)日:2017-06-20

    申请号:US14738934

    申请日:2015-06-15

    CPC classification number: G03F7/70425 G03F9/7088 H01J37/3174

    Abstract: An exposure apparatus is configured to include an electronic optical system 108 that generates an electron ray and irradiates a wafer W with the electron ray, a wafer stage WS that holds the wafer W, and an electron detector 44 and a fog preventing mechanism 70 that are placed between the electronic optical system 108 and the wafer stage WS. A substrate 71 constitutes the fog preventing mechanism 70, and opening holes 71a0 that penetrate up to the upper surface of the substrate 71 are formed in a first area of the bottom surface of the substrate 71, and opening holes 71a0 that are closed in the substrate 71 are formed in a second area of the bottom surface.

    CHARGED PARTICLE BEAM EXPOSURE APPARATUS SUITABLE FOR DRAWING ON LINE PATTERNS, AND EXPOSURE METHOD USING THE SAME
    2.
    发明申请
    CHARGED PARTICLE BEAM EXPOSURE APPARATUS SUITABLE FOR DRAWING ON LINE PATTERNS, AND EXPOSURE METHOD USING THE SAME 有权
    适用于在线图案绘制的充电颗粒光束曝光装置和使用其的曝光方法

    公开(公告)号:US20160133438A1

    公开(公告)日:2016-05-12

    申请号:US14878713

    申请日:2015-10-08

    Abstract: There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region.

    Abstract translation: 提供了一种带电粒子束曝光装置,其将包括多个带电粒子束的阵列束在预定的消隐时刻沿着与线图案交叉的方向一行地并排设置,并且因此在 带电粒子束的照射位置到达图案位置。 带电粒子束曝光装置通过将具有线图案的样本分割成在移动方向上以预定长度分布的多个曝光范围来改进数据处理控制,并且基于时间点执行光束的开关控制 当阵列光束通过设置在曝光区域中的基准位置时。

    CHARGED PARTICLE BEAM EXPOSURE APPARATUS
    5.
    发明申请
    CHARGED PARTICLE BEAM EXPOSURE APPARATUS 有权
    充电颗粒光束曝光装置

    公开(公告)号:US20150200074A1

    公开(公告)日:2015-07-16

    申请号:US14562095

    申请日:2014-12-05

    Abstract: Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate.

    Abstract translation: 提供如下配置的带电粒子束曝光装置。 从电子枪发射的电子束由不对称的照明光学系统变形以具有细长的部分。 然后将电子束施加到具有布置成一行的多个孔的束形成孔板,从而产生多个电子束。 通过在半导体衬底上沿垂直于线图案的方向移动舞台装置,并且通过使用第二装置与舞台装置的移动同步地打开或关闭多个电子束来对预定图案进行曝光 挡板和最终孔板。

    ELECTRON BEAM EXPOSURE APPARATUS AND METHOD
    6.
    发明申请
    ELECTRON BEAM EXPOSURE APPARATUS AND METHOD 审中-公开
    电子束曝光装置和方法

    公开(公告)号:US20140131589A1

    公开(公告)日:2014-05-15

    申请号:US14073600

    申请日:2013-11-06

    Inventor: Akio Yamada

    Abstract: An electron beam EB0 emitted from an electron gun 101 is cut by a first aperture 103a into a rectangular electron beam DB', which is then cut by second and third apertures 140a, 150a into an electron beam EB3 so that the edge cut by the first aperture 103a is removed from the electron beam EB1. This can prevent blur due to the influence of coulomb interaction of the electron beam EB1 between the first and second apertures 103a to 140a and perform highly accurate exposure with the electron beam EB3 having high current density.

    Abstract translation: 从电子枪101发射的电子束EB0由第一孔103a切割成矩形电子束DB',然后由第二和第三孔140a,150a切割成电子束EB3,使得由第一孔 孔103a从电子束EB1去除。 这可以防止由于电子束EB1在第一和第二孔103a至140a之间的库仑相互作用的影响而造成的模糊,并且对具有高电流密度的电子束EB3进行高精度的曝光。

    Exposure apparatus and exposure method

    公开(公告)号:US09977337B2

    公开(公告)日:2018-05-22

    申请号:US15221600

    申请日:2016-07-28

    Abstract: Provided is an exposure apparatus that exposes a pattern on a sample, the exposure apparatus including a plurality of blanking electrodes that are provided corresponding to a plurality of charged particle beams and each switch whether the corresponding particle beam irradiates the sample according to an input voltage; an irradiation control section that outputs switching signals for switching blanking voltages supplied respectively to the blanking electrodes; and a measuring section that, for each blanking electrode, measures a delay amount that is from when the switching signal changes to when the blanking voltage changes.

    EXPOSURE APPARATUS
    9.
    发明申请

    公开(公告)号:US20170229285A1

    公开(公告)日:2017-08-10

    申请号:US15402500

    申请日:2017-01-10

    Abstract: The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.

    Charged particle beam exposure apparatus
    10.
    发明授权
    Charged particle beam exposure apparatus 有权
    带电粒子束曝光装置

    公开(公告)号:US09478396B2

    公开(公告)日:2016-10-25

    申请号:US14562095

    申请日:2014-12-05

    Abstract: Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate.

    Abstract translation: 提供如下配置的带电粒子束曝光装置。 从电子枪发射的电子束由不对称的照明光学系统变形以具有细长的部分。 然后将电子束施加到具有布置成一行的多个孔的束形成孔板,从而产生多个电子束。 通过在半导体衬底上沿垂直于线图案的方向移动舞台装置,并且通过使用第二装置与舞台装置的移动同步地打开或关闭多个电子束来对预定图案进行曝光 挡板和最终孔板。

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