Abstract:
An exposure apparatus is configured to include an electronic optical system 108 that generates an electron ray and irradiates a wafer W with the electron ray, a wafer stage WS that holds the wafer W, and an electron detector 44 and a fog preventing mechanism 70 that are placed between the electronic optical system 108 and the wafer stage WS. A substrate 71 constitutes the fog preventing mechanism 70, and opening holes 71a0 that penetrate up to the upper surface of the substrate 71 are formed in a first area of the bottom surface of the substrate 71, and opening holes 71a0 that are closed in the substrate 71 are formed in a second area of the bottom surface.
Abstract:
There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region.
Abstract:
Provided is a three-dimensional laminating and shaping apparatus 100 including a column unit 200 that is configured to output an electron beam EB and deflect the electron beam EB toward the front surface of a powder layer 32, an insulating portion that electrically insulates a three-dimensional structure 36 from a ground potential member, an ammeter 73 that is configured to measure the current value indicative of the current flowing into the ground after passing through the three-dimensional structure 36, a melting judging unit 410 that is configured to detect that the powder layer 32 is melted based on the current value measured by the ammeter 73 and generate a melting signal, and a deflection controller 420 that is configured to receive the melting signal to determine the condition for the irradiation with the electron beam.
Abstract:
Complex and fine patterns may be formed by an exposure apparatus that decreases movement error of a stage including a beam generating section that generates a charged particle beam, a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section, a detecting section that detects a position of the stage section, a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section, and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount.
Abstract:
Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate.
Abstract:
An electron beam EB0 emitted from an electron gun 101 is cut by a first aperture 103a into a rectangular electron beam DB', which is then cut by second and third apertures 140a, 150a into an electron beam EB3 so that the edge cut by the first aperture 103a is removed from the electron beam EB1. This can prevent blur due to the influence of coulomb interaction of the electron beam EB1 between the first and second apertures 103a to 140a and perform highly accurate exposure with the electron beam EB3 having high current density.
Abstract:
Provided is an exposure apparatus that exposes a pattern on a sample, the exposure apparatus including a plurality of blanking electrodes that are provided corresponding to a plurality of charged particle beams and each switch whether the corresponding particle beam irradiates the sample according to an input voltage; an irradiation control section that outputs switching signals for switching blanking voltages supplied respectively to the blanking electrodes; and a measuring section that, for each blanking electrode, measures a delay amount that is from when the switching signal changes to when the blanking voltage changes.
Abstract:
The invention relates to a charged particle beam exposure apparatus configured to expose cut patterns or via patterns on a substrate having a plurality of line patterns 81a arranged on an upper surface of the substrate at a constant pitch by irradiating the substrate with a plurality of charged particle beams B1 to Bn while moving a one-dimensional array beam A1 in an X direction parallel to the line patterns 81a, the one-dimensional array beam A1 being a beam in which the charged particle beams B1 to Bn are arranged in an Y direction orthogonal to the line patterns 81a.
Abstract:
The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.
Abstract:
Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate.