Invention Grant
- Patent Title: Methods of fabricating semiconductor devices
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Application No.: US16030212Application Date: 2018-07-09
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Publication No.: US10586709B2Publication Date: 2020-03-10
- Inventor: Young-Min Ko , Hyuk Woo Kwon , Jun-Won Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2017-0166064 20171205
- Main IPC: H01L21/308
- IPC: H01L21/308 ; G03F7/20 ; H01L21/033 ; H01L21/02 ; H01L21/3213 ; H01L21/311

Abstract:
Methods for fabricating a semiconductor device are provided including sequentially forming a first hard mask layer, a second hard mask layer and a photoresist layer on a target layer, patterning the photoresist layer to form a photoresist pattern, sequentially patterning the second hard mask layer and the first hard mask layer using the photoresist pattern as an etching mask to form a first hard mask pattern and a second hard mask pattern on the first hard mask pattern, and etching the target layer using the first hard mask pattern and the second hard mask pattern as an etching mask, wherein the second hard mask layer includes impurity-doped amorphous silicon.
Public/Granted literature
- US20190172717A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES Public/Granted day:2019-06-06
Information query
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