公开(公告)号：US10586709B2

公开(公告)日：2020-03-10

申请号：US16030212

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Min Ko ,  Hyuk Woo Kwon ,  Jun-Won Lee

IPC: H01L21/308 ,  G03F7/20 ,  H01L21/033 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311

Abstract: Methods for fabricating a semiconductor device are provided including sequentially forming a first hard mask layer, a second hard mask layer and a photoresist layer on a target layer, patterning the photoresist layer to form a photoresist pattern, sequentially patterning the second hard mask layer and the first hard mask layer using the photoresist pattern as an etching mask to form a first hard mask pattern and a second hard mask pattern on the first hard mask pattern, and etching the target layer using the first hard mask pattern and the second hard mask pattern as an etching mask, wherein the second hard mask layer includes impurity-doped amorphous silicon.