Invention Grant
- Patent Title: Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory
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Application No.: US15778115Application Date: 2016-11-25
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Publication No.: US10586916B2Publication Date: 2020-03-10
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-232334 20151127; JP2016-053072 20160316; JP2016-056058 20160318; JP2016-210531 20161027; JP2016-210533 20161027
- International Application: PCT/JP2016/085001 WO 20161125
- International Announcement: WO2017/090739 WO 20170106
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G01R33/09 ; H01L43/08 ; H03B15/00 ; H01L43/06 ; H01L27/22 ; H01L43/02 ; H01L43/10 ; H01L43/14

Abstract:
A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.
Public/Granted literature
- US10546995B2 Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory Public/Granted day:2020-01-28
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