Invention Grant
- Patent Title: Spin current magnetization rotational element, method of manufacturing the same, magnetoresistance effect element, and magnetic memory
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Application No.: US16077570Application Date: 2017-11-14
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Publication No.: US10593867B2Publication Date: 2020-03-17
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki , Tohru Oikawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2016-235327 20161202
- International Application: PCT/JP2017/040910 WO 20171114
- International Announcement: WO2018/101028 WO 20180607
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L27/22 ; H01F10/32 ; G11C11/16 ; G11C11/18 ; H01L43/10

Abstract:
A spin current magnetization rotational element includes: a first ferromagnetic metal layer having a variable magnetization direction; and a spin orbital torque wiring which is joined to the first ferromagnetic metal layer and extends in a direction crossing a direction perpendicular to a plane of the first ferromagnetic metal layer, wherein the spin orbital torque wiring is constituted of a non-magnetic material composed of elements of two or more kinds and a compositional proportion of the non-magnetic material has a non-uniform distribution between a first surface joined to the first ferromagnetic metal layer and a second surface located on a side opposite to the first surface.
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