中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.015 seconds)

    SPIN INJECTION ELECTRODE STRUCTURE AND SPIN TRANSPORT ELEMENT HAVING THE SAME
    5.
    发明申请
    SPIN INJECTION ELECTRODE STRUCTURE AND SPIN TRANSPORT ELEMENT HAVING THE SAME 审中-公开
    旋转注射电极结构和旋转运动元件

    公开(公告)号：US20150001601A1

    公开(公告)日：2015-01-01

    申请号：US14378281

    申请日：2013-02-12

    Applicant: TDK CORPORATION

    Inventor： Hayato Koike ,  Tohru Oikawa ,  Tomoyuki Sasaki

    IPC: H01L43/02 ,  H01L29/82

    CPC classification number: H01L43/02 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  H01F10/1936 ,  H01L29/66984 ,  H01L29/82

    Abstract: To provide a spin injection electrode structure capable of injecting spins into a semiconductor with high efficiency and a spin transport element having the same. Aluminum oxide containing a γ-phase is used as a material making up a tunnel barrier layer. A protective film is formed outside the tunnel barrier layer. This allows a good spin injection electrode structure with few defects in a crystal or at a junction interface to be obtained, enables spins to be injected into a semiconductor with high efficiency, and allows a spin transport element having high output characteristics at room temperature to be provided.

    Abstract translation: 提供能够以高效率将自旋注入半导体的自旋注入电极结构和具有该自旋注入电极结构的自旋输送元件。 使用含有γ相的氧化铝作为构成隧道势垒层的材料。 在隧道势垒层外形成保护膜。 这允许在晶体或接合界面处具有很少的缺陷的良好的自旋注入电极结构，能够使自旋以高效率注入半导体，并且允许在室温下具有高输出特性的自旋传输元件为 提供。

    Spin conduction element and magnetic sensor and magnetic head using spin conduction
    6.
    发明授权
    Spin conduction element and magnetic sensor and magnetic head using spin conduction 有权
    旋转传导元件和磁传感器和磁头使用自旋传导

    公开(公告)号：US08861136B2

    公开(公告)日：2014-10-14

    申请号：US13799229

    申请日：2013-03-13

    Applicant: TDK Corporation

    Inventor： Tomoyuki Sasaki ,  Tohru Oikawa ,  Hayato Koike

    IPC: G11B5/127 ,  G01R33/06 ,  G11B5/02 ,  H01L43/08 ,  G01R33/12 ,  G11B5/33 ,  H01L43/02 ,  H01L29/82

    CPC classification number: H01L43/02 ,  G01R33/06 ,  G01R33/1284 ,  G11B5/02 ,  G11B5/332 ,  H01L43/08

    Abstract: A spin conduction element includes a main channel layer having a first electrode, a second electrode, a third electrode, a fourth electrode, a fifth electrode, and a sixth electrode, and extending in a first direction. Spins are injected into the main channel layer from a second ferromagnetic layer constituting the second electrode and a fourth ferromagnetic layer constituting the fourth electrode, and a spin current is detected as a voltage in a third ferromagnetic layer constituting the third electrode.

    Abstract translation: 自旋导电元件包括​​具有第一电极，第二电极，第三电极，第四电极，第五电极和第六电极并沿第一方向延伸的主通道层。 自旋从构成第二电极的第二铁磁层和构成第四电极的第四铁磁层注入主沟道层，并且在构成第三电极的第三铁磁层中检测自旋电流作为电压。

    Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element
    8.
    发明授权
    Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element 有权

    公开(公告)号：US11211548B2

    公开(公告)日：2021-12-28

    申请号：US16516333

    申请日：2019-07-19

    Applicant: TDK CORPORATION

    Inventor： Tomoyuki Sasaki ,  Tatsuo Shibata ,  Tohru Oikawa

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

    Abstract: This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance elect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

    Magnetic sensor, magnetic head, and biomagnetic sensor
    10.
    发明授权
    Magnetic sensor, magnetic head, and biomagnetic sensor 有权
    磁传感器，磁头和生物磁传感器

    公开(公告)号：US09348004B2

    公开(公告)日：2016-05-24

    申请号：US14341378

    申请日：2014-07-25

    Applicant: TDK CORPORATION

    Inventor： Tomoyuki Sasaki ,  Tohru Oikawa

    IPC: G11B5/33 ,  G01R33/09 ,  G01R33/12 ,  G11B5/39

    CPC classification number: G01R33/093 ,  G01R33/1269 ,  G01R33/1284 ,  G11B5/3909 ,  G11B2005/3996

    Abstract: A magnetic sensor includes a channel layer, a magnetization free layer placed on a first section of the channel layer, and a magnetization-fixed layer placed on a second section of the channel layer. A thickness of the channel layer of the first section is different from a thickness of the channel layer of the second section and a resistance of an interface between the channel layer and the magnetization free layer is lower than a resistance of an interface between the channel layer and the magnetization-fixed layer.

    Abstract translation: 磁传感器包括沟道层，放置在沟道层的第一部分上的无磁化层和放置在沟道层的第二部分上的磁化固定层。 第一部分的沟道层的厚度不同于第二部分的沟道层的厚度，并且沟道层和无磁化层之间的界面的电阻低于沟道层之间的界面的电阻 和磁化固定层。

Patent Agency Ranking