Invention Grant
- Patent Title: Memory device
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Application No.: US15965883Application Date: 2018-04-28
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Publication No.: US10599517B2Publication Date: 2020-03-24
- Inventor: Chien-Yin Liu , Yu-Der Chih , Hsueh-Chih Yang , Jonathan Tehan Chen , Kuan-Chun Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C16/26 ; G11C29/42 ; G11C29/52 ; G11C29/04 ; G11C11/56

Abstract:
A method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N−1 groups and the plurality of parity bits form a first group different from the N−1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N−1 groups; and providing a second word comprising updated data bits that form a second one of the N−1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N−1 groups.
Public/Granted literature
- US20190163568A1 NOVEL MEMORY DEVICE Public/Granted day:2019-05-30
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