发明授权
- 专利标题: Memory device
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申请号: US15965883申请日: 2018-04-28
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公开(公告)号: US10599517B2公开(公告)日: 2020-03-24
- 发明人: Chien-Yin Liu , Yu-Der Chih , Hsueh-Chih Yang , Jonathan Tehan Chen , Kuan-Chun Chen
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G06F11/10 ; G11C16/26 ; G11C29/42 ; G11C29/52 ; G11C29/04 ; G11C11/56
摘要:
A method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N−1 groups and the plurality of parity bits form a first group different from the N−1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N−1 groups; and providing a second word comprising updated data bits that form a second one of the N−1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N−1 groups.
公开/授权文献
- US20190163568A1 NOVEL MEMORY DEVICE 公开/授权日:2019-05-30
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