- Patent Title: Non-volatile memory device and storage device including the same
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Application No.: US15975266Application Date: 2018-05-09
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Publication No.: US10600454B2Publication Date: 2020-03-24
- Inventor: Dong-su Jang , Man-jae Yang , Jeong-don Ihm , Go-eun Jung , Byung-hoon Jeong , Young-don Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0126354 20170928
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C11/4096 ; G11C7/22 ; G11C11/4076 ; G11C16/26 ; G11C5/06

Abstract:
A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.
Public/Granted literature
- US20190096447A1 NON-VOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING THE SAME Public/Granted day:2019-03-28
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