Invention Grant
- Patent Title: Perpendicular magnetic memory using spin-orbit torque
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Application No.: US16157315Application Date: 2018-10-11
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Publication No.: US10600460B2Publication Date: 2020-03-24
- Inventor: Sarin Deshpande , Sanjeev Aggarwal , Jason Janesky , Jon Slaughter , Phillip Lopresti
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01F10/32 ; H01L27/22 ; H01L43/02

Abstract:
Spin-orbit-torque (SOT) control strip lines are provided along the sides of free layers in perpendicular magnetic tunnel junction devices. Current flowing through such SOT control strip lines injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used to force the magnetic state of the free layer to a particular state based on the direction of the current through the SOT control strip line. In other embodiments, the SOT provides an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction. Some embodiments have dedicated strip lines for a single magnetic tunnel junction such that a three-terminal device results. Other embodiments have multiple magnetic tunnel junctions sharing a strip line, where the strip line can be used to reset all of the magnetic tunnel junctions to the same state and can also be used as an assist such that individual magnetic tunnel junctions can be written using selection circuitry.
Public/Granted literature
- US20190115060A1 PERPENDICULAR MAGNETIC MEMORY USING SPIN-ORBIT TORQUE Public/Granted day:2019-04-18
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