- Patent Title: Micro-pattern forming method, capacitor and method of manufacturing the same, semiconductor device and method of manufacturing the same, and electronic system including semiconductor device
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Application No.: US16233715Application Date: 2018-12-27
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Publication No.: US10600789B2Publication Date: 2020-03-24
- Inventor: Soon-mok Ha , Jae-hee Kim , Chan Hwang , Jong-hyuk Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0173622 20161219
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/311 ; H01L21/027 ; H01L49/02

Abstract:
A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.
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