-
1.发明公开公开(公告)号：US20230393484A1
公开(公告)日：2023-12-07
申请号：US18088364
申请日：2022-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hoduk CHO , Seongbo Shim , Hyungjong Bae , Chan Hwang
IPC: G03F7/20
CPC classification number: G03F7/702
Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.
-
公开(公告)号：US11422455B2
公开(公告)日：2022-08-23
申请号：US17464826
申请日：2021-09-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doogyu Lee , Seungyoon Lee , Jeongjin Lee , Chan Hwang
IPC: G03F1/24 , H01L21/027 , G03F7/20
Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.
-
公开(公告)号：US10566252B2
公开(公告)日：2020-02-18
申请号：US15860801
申请日：2018-01-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungyoon Lee , Chan Hwang
Abstract: A method of correcting an overlay includes: forming a first pattern on a first substrate; forming a second pattern on the first pattern; obtaining a first overlay error profile of the second pattern and obtaining a first overlay correction profile from the first overlay error profile; forming a third pattern on the second pattern; obtaining a second overlay error profile of the third pattern and obtaining a second overlay correction profile from the second overlay error profile; and forming the second pattern on a second substrate, wherein the forming of the second pattern on the second substrate includes: determining whether the second overlay correction profile has a non-correctable model parameter; and when the second overlay correction profile has the non-correctable model, obtaining a preliminary correction profile to correct a position of the second pattern to be formed on the second substrate.
-
公开(公告)号：US20180330999A1
公开(公告)日：2018-11-15
申请号：US15860801
申请日：2018-01-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungyoon Lee , Chan Hwang
CPC classification number: H01L22/12 , G03F1/144 , G03F7/705 , G03F7/70525 , G03F7/70633 , G03F9/7019
Abstract: A method of correcting an overlay includes: forming a first pattern on a first substrate; forming a second pattern on the first pattern; obtaining a first overlay error profile of the second pattern and obtaining a first overlay correction profile from the first overlay error profile; forming a third pattern on the second pattern; obtaining a second overlay error profile of the third pattern and obtaining a second overlay correction profile from the second overlay error profile; and forming the second pattern on a second substrate, wherein the forming of the second pattern on the second substrate includes: determining whether the second overlay correction profile has a non-correctable model parameter; and when the second overlay correction profile has the non-correctable model, obtaining a preliminary correction profile to correct a position of the second pattern to be formed on the second substrate.
-
公开(公告)号：US20250012736A1
公开(公告)日：2025-01-09
申请号：US18662244
申请日：2024-05-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dohun Kim , Mincheol Kwak , Junseong Yoon , Jeongjin Lee , Seungyoon Lee , Chan Hwang
IPC: G01N21/956 , G01N21/95 , G06T7/00
Abstract: A method of optimizing an overlay measurement condition includes measuring, for each overlay measurement condition of multiple overlay measurement conditions, an overlay at multiple positions on a substrate; calculating, for each of the multiple overlay measurement conditions, key parameter indexes (KPIs) based on the measured overlay; converting, for each of the multiple overlay measurement conditions, the KPIs into key parameter function (KPF) values based on a KPF, where each of the KPFs has a same dimensional representation; integrating, for each of the multiple overlay measurement conditions, the KPF values to generate an integrated KPF value; and selecting an optimized overlay measurement condition from among the multiple overlay measurement conditions based on the integrated KPF values associated with each of the multiple overlay measurement conditions.
-
Patent Agency Ranking
公开(公告)号：US11960212B2
公开(公告)日：2024-04-16
申请号：US18088364
申请日：2022-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hoduk Cho , Seongbo Shim , Hyungjong Bae , Chan Hwang
IPC: G03F7/00
CPC classification number: G03F7/702 , G03F7/70116 , G03F7/70504
Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.
-
公开(公告)号：US20240112915A1
公开(公告)日：2024-04-04
申请号：US18474849
申请日：2023-09-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Janghoon Kim , Sangho Yun , Chan Hwang
IPC: H01L21/033 , H01L21/027 , H01L21/311
CPC classification number: H01L21/0337 , H01L21/0274 , H01L21/31144
Abstract: A method of fabricating a semiconductor device may implement a desired mask pattern even without additionally performing an exposure process on any one of different regions of a substrate by forming a plurality of line patterns disposed at different intervals on the different regions, respectively, and applying a double patterning process to the plurality of line patterns. Such a method may increase product reliability and manufacturing economic feasibility of a semiconductor device.
-
公开(公告)号：US11921421B2
公开(公告)日：2024-03-05
申请号：US18062231
申请日：2022-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Minseok Kang , Seungyoon Lee , Chan Hwang
CPC classification number: G03F1/70 , G03F7/2004 , G06F17/18 , H01L22/12
Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.
-
公开(公告)号：US20240027890A1
公开(公告)日：2024-01-25
申请号：US18180210
申请日：2023-03-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjong Bae , Hyun Jung Hwang , Heebom Kim , Seong-Bo Shim , Seungyoon Lee , Woo-Yong Jung , Chan Hwang
Abstract: A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.
-
公开(公告)号：US11537042B2
公开(公告)日：2022-12-27
申请号：US16807734
申请日：2020-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Minseok Kang , Seungyoon Lee , Chan Hwang
Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.
-
-
-
-
-
-
-
-
-
Search Results
28
records
(took 0.02 seconds)
