Invention Grant
- Patent Title: High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology
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Application No.: US16156729Application Date: 2018-10-10
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Publication No.: US10600910B2Publication Date: 2020-03-24
- Inventor: Qingqing Liang , Ravi Pramod Kumar Vedula , Sivakumar Kumarasamy , George Pete Imthurn , Sinan Goktepeli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/49 ; H01L21/762 ; H01L29/786 ; H01L27/12 ; H01L21/28 ; H01L29/08
Abstract:
An integrated circuit is described. The integrated circuit includes a metal oxide semiconductor field effect transistor (MOSFET). The MOSFET is on a first surface of an insulator layer of the integrated circuit. The MOSFET including a source region, a drain region, and a front gate. The MOSFET also includes an extended drain region between the drain region and a well proximate the front gate. The integrated circuit also includes back gates on a second surface opposite the first surface of the insulator layer. The back gates are overlapped by the extended drain region.
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