Invention Grant
- Patent Title: Substrate processing apparatus
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Application No.: US15512308Application Date: 2015-09-30
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Publication No.: US10607863B2Publication Date: 2020-03-31
- Inventor: Konosuke Hayashi , Takashi Ootagaki
- Applicant: SHIBAURA MECHATRONICS CORPORATION
- Applicant Address: JP Yokohama-shi
- Assignee: SHIBAURA MECHATRONICS CORPORATION
- Current Assignee: SHIBAURA MECHATRONICS CORPORATION
- Current Assignee Address: JP Yokohama-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-201917 20140930
- International Application: PCT/JP2015/077790 WO 20150930
- International Announcement: WO2016/052642 WO 20160407
- Main IPC: H01L21/67
- IPC: H01L21/67 ; B08B3/02 ; B08B3/10 ; B08B3/08

Abstract:
According to one embodiment, a substrate processing apparatus includes: a removing part (D1) configured to remove liquid droplets present in a recess (30); a drain hole (30a) located at the bottom of the recess (30) of a nozzle head (32), and configured to discharge the liquid droplets as a target to be removed out of the recess (30); and a controller configured to control the discharge state of a gas discharge nozzle (33) such that there is a period in which a gas is discharged from the gas discharge nozzle (33) at a flow rate, at which the gas discharged does not reach a surface to be processed of s substrate W, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.
Public/Granted literature
- US20170278729A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2017-09-28
Information query
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