公开(公告)号：US11670522B2

公开(公告)日：2023-06-06

申请号：US15661480

申请日：2017-07-27

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Kunihiro Miyazaki

IPC: H01L21/67

CPC classification number: H01L21/67075 ,  H01L21/6708 ,  H01L21/67017

Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.
A processing liquid generator that generates processing liquid having undergone concentration adjustment includes a processing liquid adjuster (11a), which adjusts the concentration of the processing liquid, a first processing liquid path P1, through which the processing liquid flows to the processing liquid adjuster (11a), a second processing liquid path P2, through which the processing liquid flows to the processing liquid adjuster 11a, a first concentration meter 201a, which measures the concentration of the processing liquid flowing through the first processing liquid path P1, the measured concentration being the concentration of a component involved in the concentration adjustment in the processing liquid adjuster (11a), a second concentration meter 201b, which measures the concentration of the processing liquid flowing through the second processing liquid path P2, the measured concentration being the concentration of a component that is involved in the concentration adjustment and should be measured with the first concentration meter 201a in terms of concentration, a first valve mechanism 120a/130a, which opens and closes the first processing liquid path P1, and a second valve mechanism 120b/130b, which opens and closes the second processing liquid path P2.

公开(公告)号：US20160225613A1

公开(公告)日：2016-08-04

申请号：US15021182

申请日：2014-09-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takahiro Kanai ,  Emi Matsui ,  Konosuke Hayashi

IPC: H01L21/02

Abstract: The embodiment of a substrate treatment device includes a treatment bath configured to store a treatment liquid in which a treatment object is to be immersed, a transport section configured to transport the treatment object, a temperature control section provided in at least one of the treatment bath and a position spaced from the treatment bath and configured to perform at least one of heating and cooling of the treatment object. the treatment object is at least one of: a laminated substrate including a device substrate, a support substrate, and an adhesive provided between the device substrate and the support substrate, the device substrate with the adhesive attached thereto, and the support substrate with the adhesive attached thereto.

Abstract translation: 基板处理装置的实施方式包括：处理槽，其配置为储存待处理对象物被浸渍的处理液，配置成输送处理对象物的输送部，设置在至少一个处理槽中的温度控制部 以及与治疗浴间隔开并且被配置为执行治疗对象的加热和冷却中的至少一个的位置。 处理对象是以下中的至少一种：包括装置基板，支撑基板和设置在装置基板和支撑基板之间的粘合剂的层压基板，附着有粘合剂的装置基板和具有粘合剂的支撑基板 附在其上。

公开(公告)号：US10406566B2

公开(公告)日：2019-09-10

申请号：US15608554

申请日：2017-05-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Jun Matsushita ,  Yuji Nagashima ,  Konosuke Hayashi ,  Kunihiro Miyazaki

IPC: B08B3/08 ,  H01L21/67 ,  B08B3/02

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

公开(公告)号：US09694371B2

公开(公告)日：2017-07-04

申请号：US14670983

申请日：2015-03-27

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takashi Ootagaki ,  Konosuke Hayashi

IPC: B05C5/02 ,  B05B1/26 ,  B05B3/10 ,  H01L21/67 ,  B05B3/04 ,  B05C13/02 ,  B05B13/02

CPC classification number: B05B1/265 ,  B05B3/0409 ,  B05B3/0486 ,  B05B3/1064 ,  B05B13/0235 ,  B05C5/02 ,  B05C13/02 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus according to the embodiment includes: a nozzle which ejects a treatment liquid onto a treatment target surface of a substrate; a trajectory deflector including a trajectory deflecting surface, which is an annular inclined surface that deflects a traveling direction of the treatment liquid ejected from the nozzle and makes the treatment liquid incident on the treatment target surface, the trajectory deflecting surface having an inclination angle varying in a direction of annular extension of the trajectory deflecting surface; and a position changer which moves an incident position of the treatment liquid on the trajectory deflecting surface in the direction of annular extension of the trajectory deflecting surface.

公开(公告)号：US09586391B2

公开(公告)日：2017-03-07

申请号：US14859627

申请日：2015-09-21

Applicant: Shibaura Mechatronics Corporation

Inventor： Konosuke Hayashi ,  Daisuke Matsushima

IPC: B32B41/00 ,  B23K20/02 ,  B23K20/233 ,  B23K20/24 ,  B23K20/26 ,  H01L21/67 ,  B32B37/10 ,  B32B37/18 ,  B32B37/00

CPC classification number: B32B41/00 ,  B23K20/02 ,  B23K20/233 ,  B23K20/24 ,  B23K20/26 ,  B23K2101/40 ,  B32B37/003 ,  B32B37/10 ,  B32B37/18 ,  B32B2309/72 ,  B32B2313/00 ,  B32B2315/08 ,  B32B2457/14 ,  H01L21/67092

Abstract: A bonding apparatus includes a substrate holder holding the second substrate; a pusher pushing a back surface of the second substrate; a substrate support unit including a support talon supporting a circumferential edge portion of the first substrate to oppose the second substrate with a prescribed spacing between the second substrate and the circumferential edge portion of the first substrate; and a controller controlling a lifting/lowering operation of the pusher. The pusher pushes one prescribed point of the back surface of the second substrate, the one prescribed point corresponding to a position where a distance between a bonding surface of the first substrate and a bonding surface of the second substrate is shorter than a distance from the circumferential edge portion of the bonding surface of the first substrate to the bonding surface of the second substrate.

Abstract translation: 接合装置包括保持第二基板的基板保持件; 推动第二基板的后表面的推动器; 基板支撑单元，其包括支撑爪，所述支撑爪支撑所述第一基板的周缘部分，以在所述第二基板与所述第一基板的周缘部之间以规定的间隔与所述第二基板相对; 以及控制推动器的升降操作的控制器。 推动器推动第二基板的背面的一个规定点，对应于第一基板的接合面和第二基板的接合面之间的距离比距离周向的距离短的位置的一个规定点 第一基板的接合表面的边缘部分到第二基板的接合表面。

公开(公告)号：US20140041694A1

公开(公告)日：2014-02-13

申请号：US13961216

申请日：2013-08-07

Applicant: Shibaura Mechatronics Corporation

Inventor： Kunihiro MIYAZAKI ,  Konosuke Hayashi

IPC: H01L21/67

CPC classification number: H01L21/6704 ,  B08B3/02 ,  G03F7/42 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/67017 ,  H01L21/67051

Abstract: An cleaning solution producing apparatus according to an embodiment includes: a mixing unit configured to produce a liquid mixture by mixing a hydrogen peroxide solution into an acidic or alkaline liquid, and to raise the pressure of the produced liquid mixture by use of an oxygen gas produced through the decomposition of the hydrogen peroxide solution, or by use of vapor produced by heat of the reaction; and a bubble producing unit configured to produce multiple fine bubbles in the liquid mixture by releasing the pressure of the liquid mixture which is raised by the mixing unit.

Abstract translation: 根据一个实施方案的清洗溶液生产设备包括：混合单元，其被配置为通过将过氧化氢溶液混合到酸性或碱性液体中来产生液体混合物，并通过使用产生的氧气提高所产生的液体混合物的压力 通过过氧化氢溶液的分解，或通过使用由反应热产生的蒸气; 以及气泡产生单元，其被配置为通过释放由所述混合单元升高的液体混合物的压力而在所述液体混合物中产生多个细小气泡。

公开(公告)号：US20180096864A1

公开(公告)日：2018-04-05

申请号：US15720928

申请日：2017-09-29

Applicant: Shibaura Mechatronics Corporation

Inventor： Yuji Nagashima ,  Konosuke Hayashi

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/08 ,  B08B5/02 ,  B08B3/02 ,  F26B3/30

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/08 ,  B08B5/02 ,  F26B3/30 ,  H01L21/02052 ,  H01L21/67115 ,  H01L21/68764

Abstract: According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.

公开(公告)号：US09741596B2

公开(公告)日：2017-08-22

申请号：US14138196

申请日：2013-12-23

Applicant: Shibaura Mechatronics Corporation

Inventor： Konosuke Hayashi ,  Emi Matsui

IPC: B29C65/48 ,  B29C65/78 ,  B32B37/10 ,  B32B38/18 ,  B32B39/00 ,  B32B43/00 ,  C08J5/12 ,  B23K37/04 ,  H01L21/673 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/673 ,  H01L21/67092 ,  H01L21/6838 ,  Y10T156/10 ,  Y10T156/17

Abstract: According to one embodiment, a bonding apparatus for processing a retained substrate includes a main body unit, a nozzle, a gas supply unit, and a substrate support unit. The nozzle opens on a face of the main body unit on a side that a first substrate is retained. The gas supply unit is configured to supply gas to the nozzle, to apply suction to the first substrate and to separate the substrate from the face of the main body unit. The substrate support unit is configured to support a peripheral edge portion of a second substrate provided in opposition to the first substrate with a predetermined gap.

公开(公告)号：US09553003B2

公开(公告)日：2017-01-24

申请号：US14212382

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Masaaki Furuya ,  Takashi Ootagaki ,  Yuji Nagashima ,  Atsushi Kinase ,  Masahiro Abe

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/6704 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67115

Abstract: In a substrate processing device 10 having a heating and drying unit 103 for drying a surface of a substrate W, the heating and drying unit 103 heats upward a vertically downward surface of the substrate W to dry the surface of the substrate by dropping and removing, by gravity, the droplets of the volatile solvent formed on the surface of the substrate W by the heating operation.

Abstract translation: 在具有用于干燥基板W的表面的加热和干燥单元103的基板处理装置10中，加热和干燥单元103向上加热基板W的垂直向下的表面，以通过掉落和去除来干燥基板的表面， 通过重力，通过加热操作形成在基板W的表面上的挥发性溶剂的液滴。

公开(公告)号：US20160009070A1

公开(公告)日：2016-01-14

申请号：US14859627

申请日：2015-09-21

Applicant: Shibaura Mechatronics Corporation

Inventor： Konosuke Hayashi ,  Daisuke Matsushima

IPC: B32B41/00 ,  B32B37/18 ,  B32B37/10

CPC classification number: B32B41/00 ,  B23K20/02 ,  B23K20/233 ,  B23K20/24 ,  B23K20/26 ,  B23K2101/40 ,  B32B37/003 ,  B32B37/10 ,  B32B37/18 ,  B32B2309/72 ,  B32B2313/00 ,  B32B2315/08 ,  B32B2457/14 ,  H01L21/67092

Abstract: According to the embodiment of the present invention, a bonding apparatus comprising: a substrate holder holding the second substrate; a pusher pushing a back surface of the second substrate; a substrate support unit including a support talon supporting a circumferential edge portion of the first substrate to oppose the second substrate with a prescribed spacing between the second substrate and the circumferential edge portion of the first substrate; and a controller controlling a lifting/lowering operation of the pusher, the pusher pushing one prescribed point of the back surface of the second substrate, the one prescribed point corresponding to a position where a distance between a bonding surface of the first substrate and a bonding surface of the second substrate is shorter than a distance from the circumferential edge portion of the bonding surface of the first substrate to the bonding surface of the second substrate.

Abstract translation: 根据本发明的实施例，一种接合装置，包括：保持第二基板的基板保持件; 推动第二基板的后表面的推动器; 基板支撑单元，其包括支撑爪，所述支撑爪支撑所述第一基板的周缘部分，以在所述第二基板与所述第一基板的周缘部之间以规定的间隔与所述第二基板相对; 以及控制器，其控制所述推动器的提升/降低操作，所述推动器推动所述第二基板的背面的一个规定点，所述一个规定点对应于所述第一基板的接合面与所述第二基板的接合面之间的距离 第二基板的表面比从第一基板的接合面的周缘部到第二基板的接合面的距离短。